Silicon-carbon source and drain stressors: Carbon profile design by ion implantation

Silicon-carbon source and drain stressors: Carbon profile design by ion implantation

10.1149/2.072204jes

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Bibliographic Details
Main Authors: Zhou, Q., Koh, S.-M., Tong, Y., Henry, T., Erokhin, Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83022
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Institution: National University of Singapore
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Summary:10.1149/2.072204jes

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