Silicon-carbon source and drain stressors: Carbon profile design by ion implantation

10.1149/2.072204jes

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Bibliographic Details
Main Authors:	Zhou, Q., Koh, S.-M., Tong, Y., Henry, T., Erokhin, Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83022
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Institution:	National University of Singapore

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