Silicon-carbon source and drain stressors: Carbon profile design by ion implantation

10.1149/2.072204jes

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Bibliographic Details
Main Authors:	Zhou, Q., Koh, S.-M., Tong, Y., Henry, T., Erokhin, Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83022
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83022
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spelling	sg-nus-scholar.10635-830222023-10-30T07:10:23Z Silicon-carbon source and drain stressors: Carbon profile design by ion implantation Zhou, Q. Koh, S.-M. Tong, Y. Henry, T. Erokhin, Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/2.072204jes Journal of the Electrochemical Society 159 4 H425-H432 JESOA 2014-10-07T04:36:18Z 2014-10-07T04:36:18Z 2012 Article Zhou, Q., Koh, S.-M., Tong, Y., Henry, T., Erokhin, Y., Yeo, Y.-C. (2012). Silicon-carbon source and drain stressors: Carbon profile design by ion implantation. Journal of the Electrochemical Society 159 (4) : H425-H432. ScholarBank@NUS Repository. https://doi.org/10.1149/2.072204jes 00134651 http://scholarbank.nus.edu.sg/handle/10635/83022 000300488300095 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/2.072204jes
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhou, Q. Koh, S.-M. Tong, Y. Henry, T. Erokhin, Y. Yeo, Y.-C.
format	Article
author	Zhou, Q. Koh, S.-M. Tong, Y. Henry, T. Erokhin, Y. Yeo, Y.-C.
spellingShingle	Zhou, Q. Koh, S.-M. Tong, Y. Henry, T. Erokhin, Y. Yeo, Y.-C. Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
author_sort	Zhou, Q.
title	Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
title_short	Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
title_full	Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
title_fullStr	Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
title_full_unstemmed	Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
title_sort	silicon-carbon source and drain stressors: carbon profile design by ion implantation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83022
_version_	1781784277365555200

Silicon-carbon source and drain stressors: Carbon profile design by ion implantation

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