Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction

10.1143/JJAP.50.04DF01

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Bibliographic Details
Main Authors:	Gong, X., Chin, H.-C., Koh, S.-M., Wang, L., Ivana, Zhu, Z., Wang, B., Chia, C.K., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83039
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-830392023-10-26T20:36:46Z Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction Gong, X. Chin, H.-C. Koh, S.-M. Wang, L. Ivana Zhu, Z. Wang, B. Chia, C.K. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1143/JJAP.50.04DF01 Japanese Journal of Applied Physics 50 4 PART 2 - 2014-10-07T04:36:33Z 2014-10-07T04:36:33Z 2011-04 Article Gong, X., Chin, H.-C., Koh, S.-M., Wang, L., Ivana, Zhu, Z., Wang, B., Chia, C.K., Yeo, Y.-C. (2011-04). Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction. Japanese Journal of Applied Physics 50 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.50.04DF01 00214922 http://scholarbank.nus.edu.sg/handle/10635/83039 000289722400071 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1143/JJAP.50.04DF01
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gong, X. Chin, H.-C. Koh, S.-M. Wang, L. Ivana Zhu, Z. Wang, B. Chia, C.K. Yeo, Y.-C.
format	Article
author	Gong, X. Chin, H.-C. Koh, S.-M. Wang, L. Ivana Zhu, Z. Wang, B. Chia, C.K. Yeo, Y.-C.
spellingShingle	Gong, X. Chin, H.-C. Koh, S.-M. Wang, L. Ivana Zhu, Z. Wang, B. Chia, C.K. Yeo, Y.-C. Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
author_sort	Gong, X.
title	Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
title_short	Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
title_full	Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
title_fullStr	Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
title_full_unstemmed	Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
title_sort	source/drain engineering for in0.7ga0.3as n-channel metal-oxide-semiconductor field-effect transistors. raised source/drain with in situ doping for series resistance reduction
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83039
_version_	1781784283723071488

Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction

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