Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

10.1016/j.sse.2013.01.031

Saved in:

Bibliographic Details
Main Authors:	Wang, L., Su, S., Wang, W., Gong, X., Yang, Y., Guo, P., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Germanium-tin High-mobility Metal-oxide-semiconductor field-effect Surface passivation Transistor (MOSFET)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83077
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-83077
record_format	dspace
spelling	sg-nus-scholar.10635-830772023-10-29T20:57:55Z Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation Wang, L. Su, S. Wang, W. Gong, X. Yang, Y. Guo, P. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Germanium-tin High-mobility Metal-oxide-semiconductor field-effect Surface passivation Transistor (MOSFET) 10.1016/j.sse.2013.01.031 Solid-State Electronics 83 66-70 SSELA 2014-10-07T04:36:59Z 2014-10-07T04:36:59Z 2013 Article Wang, L., Su, S., Wang, W., Gong, X., Yang, Y., Guo, P., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C. (2013). Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation. Solid-State Electronics 83 : 66-70. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.01.031 00381101 http://scholarbank.nus.edu.sg/handle/10635/83077 000318464500013 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Germanium-tin High-mobility Metal-oxide-semiconductor field-effect Surface passivation Transistor (MOSFET)
spellingShingle	Germanium-tin High-mobility Metal-oxide-semiconductor field-effect Surface passivation Transistor (MOSFET) Wang, L. Su, S. Wang, W. Gong, X. Yang, Y. Guo, P. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
description	10.1016/j.sse.2013.01.031
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, L. Su, S. Wang, W. Gong, X. Yang, Y. Guo, P. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C.
format	Article
author	Wang, L. Su, S. Wang, W. Gong, X. Yang, Y. Guo, P. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C.
author_sort	Wang, L.
title	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
title_short	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
title_full	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
title_fullStr	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
title_full_unstemmed	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
title_sort	strained germanium-tin (gesn) p-channel metal-oxide-semiconductor field-effect-transistors (p-mosfets) with ammonium sulfide passivation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83077
_version_	1781784294307397632

Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Similar Items