Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

10.1016/j.sse.2013.01.031

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Bibliographic Details
Main Authors: Wang, L., Su, S., Wang, W., Gong, X., Yang, Y., Guo, P., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Germanium-tin
High-mobility
Metal-oxide-semiconductor field-effect
Surface passivation
Transistor (MOSFET)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83077
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Institution: National University of Singapore

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