Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

• Main Authors: Wang, L., Su, S., Wang, W., Gong, X., Yang, Y., Guo, P., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Germanium-tin; High-mobility; Metal-oxide-semiconductor field-effect; Surface passivation; Transistor (MOSFET)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83077
• Institution: National University of Singapore

10.1016/j.sse.2013.01.031