Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance

10.1109/TED.2007.915053

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Bibliographic Details
Main Authors:	Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Lateral tensile strain n-MOSFET Silicon-carbon (Si:C) Strain-transfer structure (STS)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83081
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83081
record_format	dspace
spelling	sg-nus-scholar.10635-830812024-11-09T07:32:38Z Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Lateral tensile strain n-MOSFET Silicon-carbon (Si:C) Strain-transfer structure (STS) 10.1109/TED.2007.915053 IEEE Transactions on Electron Devices 55 3 850-857 IETDA 2014-10-07T04:37:02Z 2014-10-07T04:37:02Z 2008-03 Article Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-03). Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance. IEEE Transactions on Electron Devices 55 (3) : 850-857. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.915053 00189383 http://scholarbank.nus.edu.sg/handle/10635/83081 000253505800021 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Lateral tensile strain n-MOSFET Silicon-carbon (Si:C) Strain-transfer structure (STS)
spellingShingle	Lateral tensile strain n-MOSFET Silicon-carbon (Si:C) Strain-transfer structure (STS) Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
description	10.1109/TED.2007.915053
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
author_sort	Ang, K.-W.
title	Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
title_short	Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
title_full	Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
title_fullStr	Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
title_full_unstemmed	Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
title_sort	strained n-mosfet with embedded source/drain stressors and strain-transfer structure (sts) for enhanced transistor performance
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83081
_version_	1821220407691182080

Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance

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