Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance

• Main Authors: Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Lateral tensile strain; n-MOSFET; Silicon-carbon (Si:C); Strain-transfer structure (STS)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83081
• Institution: National University of Singapore

10.1109/TED.2007.915053