Strained silicon nanowire transistors with germanium source and drain stressors

• Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Germanium stressors; Silicon-germanium stressors; Strained silicon nanowires
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83084
• Institution: National University of Singapore

10.1109/TED.2008.2005153