Strained silicon nanowire transistors with germanium source and drain stressors

Strained silicon nanowire transistors with germanium source and drain stressors

10.1109/TED.2008.2005153

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Germanium stressors
Silicon-germanium stressors
Strained silicon nanowires
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83084
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Institution: National University of Singapore

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