The electrical and material properties of HfO xN y dielectric on germanium substrate

The electrical and material properties of HfO xN y dielectric on germanium substrate

10.1143/JJAP.43.L1208

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Bibliographic Details
Main Authors: Zhang, Q., Wu, N., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Annealing
Deposition
Germanium
Hafnium oxynitride
MOS capacitor
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83170
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Institution: National University of Singapore
Description
Summary:10.1143/JJAP.43.L1208

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