Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si 1-xGex/Si nMOSFETs with HfO2 gate dielectric

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si 1-xGex/Si nMOSFETs with HfO2 gate dielectric

Semiconductor Science and Technology

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Bibliographic Details
Main Authors: Yeo, C.C., Cho, B.J., Lee, M.H., Liu, C.W., Choi, K.J., Lee, T.W.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83194
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Institution: National University of Singapore
Description
Summary:Semiconductor Science and Technology

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