Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si 1-xGex/Si nMOSFETs with HfO2 gate dielectric
Semiconductor Science and Technology
Saved in:
Main Authors: | Yeo, C.C., Cho, B.J., Lee, M.H., Liu, C.W., Choi, K.J., Lee, T.W. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83194 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric
by: Yeo, C.C., et al.
Published: (2011) -
Monte Carlo simulations of strained Si/SiGe-OI nMOSFETs
by: A. Yangthaisong, et al.
Published: (2018) -
Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers
by: Bera, M.K., et al.
Published: (2014) -
Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices
by: Wong, L.H., et al.
Published: (2014) -
Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealing
by: Ong, K.K., et al.
Published: (2014)