Tunable stress and controlled thickness modification in graphene by annealing

• Main Authors: Ni, Z.H., Wang, H.M., Ma, Y., Kasim, J., Wu, Y.H., Shen, Z.X.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Annealing; Defects; Graphene; Raman; Stress
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83223

10.1021/nn800031m