Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications
10.1109/TED.2006.878017
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2014
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sg-nus-scholar.10635-832792024-11-11T07:32:13Z Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications Ren, C. Chan, D.S.H. Li, M.-F. Loh, W.-Y. Balakumar, S. Tung, C.H. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Lanthanide Metal gate electrode Metal nitride (MNx) NMOS Work function 10.1109/TED.2006.878017 IEEE Transactions on Electron Devices 53 8 1877-1884 IETDA 2014-10-07T04:39:26Z 2014-10-07T04:39:26Z 2006-08 Article Ren, C., Chan, D.S.H., Li, M.-F., Loh, W.-Y., Balakumar, S., Tung, C.H., Balasubramanian, N., Kwong, D.-L. (2006-08). Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications. IEEE Transactions on Electron Devices 53 (8) : 1877-1884. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.878017 00189383 http://scholarbank.nus.edu.sg/handle/10635/83279 000239286700017 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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Lanthanide Metal gate electrode Metal nitride (MNx) NMOS Work function |
| spellingShingle |
Lanthanide Metal gate electrode Metal nitride (MNx) NMOS Work function Ren, C. Chan, D.S.H. Li, M.-F. Loh, W.-Y. Balakumar, S. Tung, C.H. Balasubramanian, N. Kwong, D.-L. Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications |
| description |
10.1109/TED.2006.878017 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Ren, C. Chan, D.S.H. Li, M.-F. Loh, W.-Y. Balakumar, S. Tung, C.H. Balasubramanian, N. Kwong, D.-L. |
| format |
Article |
| author |
Ren, C. Chan, D.S.H. Li, M.-F. Loh, W.-Y. Balakumar, S. Tung, C.H. Balasubramanian, N. Kwong, D.-L. |
| author_sort |
Ren, C. |
| title |
Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications |
| title_short |
Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications |
| title_full |
Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications |
| title_fullStr |
Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications |
| title_full_unstemmed |
Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications |
| title_sort |
work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for nmos device applications |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83279 |
| _version_ |
1821202593493286912 |