Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications

Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications

10.1109/TED.2006.878017

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Bibliographic Details
Main Authors: Ren, C., Chan, D.S.H., Li, M.-F., Loh, W.-Y., Balakumar, S., Tung, C.H., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Lanthanide
Metal gate electrode
Metal nitride (MNx)
NMOS
Work function
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83279
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Institution: National University of Singapore

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