(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs

(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs

10.1109/ISTDM.2012.6222449

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Main Authors: Wang, L., Su, S., Wang, W., Gong, X., Yang, Y., Guo, P., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83287
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-832872015-01-26T08:27:18Z (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs Wang, L. Su, S. Wang, W. Gong, X. Yang, Y. Guo, P. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISTDM.2012.6222449 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings 44-45 2014-10-07T04:39:32Z 2014-10-07T04:39:32Z 2012 Conference Paper Wang, L.,Su, S.,Wang, W.,Gong, X.,Yang, Y.,Guo, P.,Zhang, G.,Xue, C.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 44-45. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISTDM.2012.6222449" target="_blank">https://doi.org/10.1109/ISTDM.2012.6222449</a> 9781457718625 http://scholarbank.nus.edu.sg/handle/10635/83287 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/ISTDM.2012.6222449
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wang, L.
Su, S.
Wang, W.
Gong, X.
Yang, Y.
Guo, P.
Zhang, G.
Xue, C.
Cheng, B.
Han, G.
Yeo, Y.-C.
format Conference or Workshop Item
author Wang, L.
Su, S.
Wang, W.
Gong, X.
Yang, Y.
Guo, P.
Zhang, G.
Xue, C.
Cheng, B.
Han, G.
Yeo, Y.-C.
spellingShingle Wang, L.
Su, S.
Wang, W.
Gong, X.
Yang, Y.
Guo, P.
Zhang, G.
Xue, C.
Cheng, B.
Han, G.
Yeo, Y.-C.
(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
author_sort Wang, L.
title (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
title_short (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
title_full (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
title_fullStr (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
title_full_unstemmed (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
title_sort (nh4)2s passivation for high mobility germanium-tin (gesn) p-mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83287
_version_ 1681089408026017792

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