(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs

• Main Authors: Wang, L., Su, S., Wang, W., Gong, X., Yang, Y., Guo, P., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83287
• Institution: National University of Singapore

10.1109/ISTDM.2012.6222449