5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique

5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique

10.1109/VLSIT.2008.4588554

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83300
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Institution: National University of Singapore
Description
Summary:10.1109/VLSIT.2008.4588554

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