5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique

• Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83300
• Institution: National University of Singapore

10.1109/VLSIT.2008.4588554