5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique

10.1109/VLSIT.2008.4588554

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Bibliographic Details
Main Authors:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83300
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83300
record_format	dspace
spelling	sg-nus-scholar.10635-833002015-02-10T05:12:19Z 5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSIT.2008.4588554 Digest of Technical Papers - Symposium on VLSI Technology 36-37 DTPTE 2014-10-07T04:39:42Z 2014-10-07T04:39:42Z 2008 Conference Paper Liow, T.-Y.,Tan, K.-M.,Lee, R.T.P.,Zhu, M.,Tan, B.L.-H.,Samudra, G.S.,Balasubramanian, N.,Yeo, Y.-C. (2008). 5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique. Digest of Technical Papers - Symposium on VLSI Technology : 36-37. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSIT.2008.4588554" target="_blank">https://doi.org/10.1109/VLSIT.2008.4588554</a> 9781424418053 07431562 http://scholarbank.nus.edu.sg/handle/10635/83300 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSIT.2008.4588554
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
spellingShingle	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. 5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
author_sort	Liow, T.-Y.
title	5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
title_short	5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
title_full	5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
title_fullStr	5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
title_full_unstemmed	5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
title_sort	5 nm gate length nanowire-fets and planar utb-fets with pure germanium source/drain stressors and laser-free melt-enhanced dopant (melted) diffusion and activation technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83300
_version_	1681089410460811264

5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique

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