Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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2014
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sg-nus-scholar.10635-835342015-04-14T20:04:38Z Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films Choi, W.K. Shi, J. Chor, E.F. ELECTRICAL & COMPUTER ENGINEERING Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 4 1415-1421 JVTBD 2014-10-07T04:42:18Z 2014-10-07T04:42:18Z 2003-07 Conference Paper Choi, W.K.,Shi, J.,Chor, E.F. (2003-07). Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (4) : 1415-1421. ScholarBank@NUS Repository. 10711023 http://scholarbank.nus.edu.sg/handle/10635/83534 NOT_IN_WOS Scopus |
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National University of Singapore |
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NUS Library |
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Singapore |
| collection |
ScholarBank@NUS |
| description |
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Choi, W.K. Shi, J. Chor, E.F. |
| format |
Conference or Workshop Item |
| author |
Choi, W.K. Shi, J. Chor, E.F. |
| spellingShingle |
Choi, W.K. Shi, J. Chor, E.F. Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films |
| author_sort |
Choi, W.K. |
| title |
Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films |
| title_short |
Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films |
| title_full |
Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films |
| title_fullStr |
Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films |
| title_full_unstemmed |
Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films |
| title_sort |
characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83534 |
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1681089453606567936 |