Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films

• Main Authors: Choi, W.K., Shi, J., Chor, E.F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83534
• Institution: National University of Singapore

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures