Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process

Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process

10.1149/1.2986827

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Bibliographic Details
Main Authors: Xie, R., Thamarai, M., Sun, Z., Yu, M., Lai, D.M.Y., Chan, L., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83699
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83699

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