Robust HfN Metal Gate Electrode for Advanced MOS Devices Application

Robust HfN Metal Gate Electrode for Advanced MOS Devices Application

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C.X., Kwong, D.-L., Tung, C.H., Bera, K.L., Leo, C.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84145
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84145

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