Robust HfN Metal Gate Electrode for Advanced MOS Devices Application

Robust HfN Metal Gate Electrode for Advanced MOS Devices Application

Digest of Technical Papers - Symposium on VLSI Technology

Saved in:

Bibliographic Details
Main Authors:	Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C.X., Kwong, D.-L., Tung, C.H., Bera, K.L., Leo, C.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84145
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
by: Yu, H.Y., et al.
Published: (2014)

Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
by: Yu, H.Y., et al.
Published: (2014)

Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications
by: Yu, H.Y., et al.
Published: (2014)

Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications
by: Kang, J.F., et al.
Published: (2014)

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices
by: Yu, H.Y., et al.
Published: (2014)

TDDB characteristics of ultra-thin HfN/HfO2 gate stack
by: Yang, H., et al.
Published: (2014)

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
by: Kang, J.F., et al.
Published: (2014)

Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
by: Kang, J.F., et al.
Published: (2014)

Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
by: Kang, J.F., et al.
Published: (2014)

A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate
by: Ren, C., et al.
Published: (2014)

Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
by: Kang, J.F., et al.
Published: (2014)

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps
by: Sa, N., et al.
Published: (2014)

Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
by: Wang, X.P., et al.
Published: (2014)

Thermally stable fully silicided Hf-silicide metal-gate electrode
by: Park, C.S., et al.
Published: (2014)

Quantum tunneling and scalability of HfO2 and HfAlO gate stacks
by: Hou, Y.T., et al.
Published: (2014)

HfO2 gate dielectrics for future generation of CMOS device application
by: Yu, H.Y., et al.
Published: (2014)

Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
by: Kang, F.J., et al.
Published: (2014)

Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric
by: Xie, R., et al.
Published: (2014)

Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks
by: Hou, Y.T., et al.
Published: (2014)

Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices
by: Li, M.F., et al.
Published: (2014)

MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
by: Park, C.S., et al.
Published: (2014)

Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
by: Zhu, S., et al.
Published: (2014)

TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
by: Lee, S., et al.
Published: (2014)

A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application
by: Wan, S.H., et al.
Published: (2014)

Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes
by: Zhu, S., et al.
Published: (2014)

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
by: Li, R., et al.
Published: (2014)

Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
by: Wang, X.P., et al.
Published: (2014)

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
by: Gao, F., et al.
Published: (2014)

Laminated metal gate electrode with tunable work function for advanced CMOS
by: Bae, S.H., et al.
Published: (2014)

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
by: Zhu, S., et al.
Published: (2014)

Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application
by: Yu, X., et al.
Published: (2014)

Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs
by: Shen, C., et al.
Published: (2014)

Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOy
by: Wang, X.P., et al.
Published: (2014)

Three-layer laminated metal gate electrodes with tunable work functions for CMOS applications
by: Bai, W.P., et al.
Published: (2014)

Thermally stable fully silicided Hf silicide metal gate electrode
by: PARK, CHANG SEO, et al.
Published: (2012)

MOS characteristics of substituted Al gate on high-κ dielectric
by: Park, C.S., et al.
Published: (2014)

MOS characteristics of substituted Al gate on high-κ dielectric
by: Park, C.S., et al.
Published: (2014)

Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
by: Yang, J.-J., et al.
Published: (2014)

Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
by: Shen, C., et al.
Published: (2014)

A novel high-k gate dielectric HfLaO for next generation CMOS technology
by: Li, M.-F., et al.
Published: (2014)