A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application

• Main Authors: Wan, S.H., Chen, S., Xing, P.W., Chan, D.S.H., Byung, J.C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83399
• Institution: National University of Singapore

10.1109/VLSIT.2007.4339764