A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application
10.1109/VLSIT.2007.4339764
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Main Authors: | Wan, S.H., Chen, S., Xing, P.W., Chan, D.S.H., Byung, J.C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83399 |
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Institution: | National University of Singapore |
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