Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process

10.1149/1.2986827

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Bibliographic Details
Main Authors:	Xie, R., Thamarai, M., Sun, Z., Yu, M., Lai, D.M.Y., Chan, L., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83699
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83699
record_format	dspace
spelling	sg-nus-scholar.10635-836992023-10-25T07:33:38Z Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process Xie, R. Thamarai, M. Sun, Z. Yu, M. Lai, D.M.Y. Chan, L. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2986827 ECS Transactions 16 10 707-716 2014-10-07T04:44:11Z 2014-10-07T04:44:11Z 2008 Conference Paper Xie, R., Thamarai, M., Sun, Z., Yu, M., Lai, D.M.Y., Chan, L., Zhu, C. (2008). Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process. ECS Transactions 16 (10) : 707-716. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2986827 9781566776561 19385862 http://scholarbank.nus.edu.sg/handle/10635/83699 000273336700077 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.2986827
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Xie, R. Thamarai, M. Sun, Z. Yu, M. Lai, D.M.Y. Chan, L. Zhu, C.
format	Conference or Workshop Item
author	Xie, R. Thamarai, M. Sun, Z. Yu, M. Lai, D.M.Y. Chan, L. Zhu, C.
spellingShingle	Xie, R. Thamarai, M. Sun, Z. Yu, M. Lai, D.M.Y. Chan, L. Zhu, C. Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process
author_sort	Xie, R.
title	Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process
title_short	Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process
title_full	Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process
title_fullStr	Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process
title_full_unstemmed	Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process
title_sort	enhanced ge mos device performance through a novel post-gate cf 4-plasma treatment process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83699
_version_	1781784383318917120

Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process

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