Enhanced Ge MOS device performance through a novel post-gate CF 4-plasma treatment process

• Main Authors: Xie, R., Thamarai, M., Sun, Z., Yu, M., Lai, D.M.Y., Chan, L., Zhu, C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83699
• Institution: National University of Singapore

10.1149/1.2986827