HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications

• Main Authors: Kim, S.J., Cho, B.J., Li, M.-F., Zhu, C., Chin, A., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83774
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology