Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention

Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Chin, A., Laio, C.C., Chen, C., Chiang, K.C., Yu, D.S., Yoo, W.J., Samudra, G.S., Wang, T., Hsieh, I.J., McAlister, S.P., Chi, C.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83908
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83908

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