Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention

• Main Authors: Chin, A., Laio, C.C., Chen, C., Chiang, K.C., Yu, D.S., Yoo, W.J., Samudra, G.S., Wang, T., Hsieh, I.J., McAlister, S.P., Chi, C.C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83908
• Institution: National University of Singapore

Technical Digest - International Electron Devices Meeting, IEDM