Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout

Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

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Bibliographic Details
Main Authors: Kao, H.L., Chin, A., Lai, J.M., Lee, C.F., Chiang, K.C., McAlister, S.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Lifetime
Model
NF min
RF noise
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83968
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83968

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