Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Saved in:
Main Authors: | Kao, H.L., Chin, A., Lai, J.M., Lee, C.F., Chiang, K.C., McAlister, S.P. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83968 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Low noise RF MOSFETs on flexible plastic substrates
by: Kao, H.L., et al.
Published: (2014) -
Low noise and high gain RF MOSFETs on plastic substrates
by: Kao, H.L., et al.
Published: (2014) -
Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer
by: Kao, H.L., et al.
Published: (2014) -
Very high density RF MIM capacitor compatible with VLSI
by: Chiang, K.C., et al.
Published: (2014) -
Characterization and modeling of MOSFETS for RF applications
by: MAHALINGAM UMASHANKAR
Published: (2010)