Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

10.1063/1.3700224

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Bibliographic Details
Main Authors: Lim, P.S.Y., Zhi Chi, D., Chong Lim, P., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83974
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Institution: National University of Singapore
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Summary:10.1063/1.3700224

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