MRAM device incorporating single-layer switching via rashba-induced spin torque

10.1109/TMAG.2011.2158634

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Bibliographic Details
Main Authors: Guo, J., Tan, S.G., Jalil, M.B.A., Eason, K., Lua, S.Y.H., Rachid, S., Meng, H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83980
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Institution: National University of Singapore
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Summary:10.1109/TMAG.2011.2158634