MRAM device incorporating single-layer switching via rashba-induced spin torque

• Main Authors: Guo, J., Tan, S.G., Jalil, M.B.A., Eason, K., Lua, S.Y.H., Rachid, S., Meng, H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Magnetic RAM (MRAM); Rashba spin-orbit interaction; spin transfer torque (STT)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83980
• Institution: National University of Singapore

10.1109/TMAG.2011.2158634