MRAM device incorporating single-layer switching via rashba-induced spin torque

10.1109/TMAG.2011.2158634

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Bibliographic Details
Main Authors:	Guo, J., Tan, S.G., Jalil, M.B.A., Eason, K., Lua, S.Y.H., Rachid, S., Meng, H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Magnetic RAM (MRAM) Rashba spin-orbit interaction spin transfer torque (STT)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83980
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83980
record_format	dspace
spelling	sg-nus-scholar.10635-839802023-10-26T21:56:03Z MRAM device incorporating single-layer switching via rashba-induced spin torque Guo, J. Tan, S.G. Jalil, M.B.A. Eason, K. Lua, S.Y.H. Rachid, S. Meng, H. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE Magnetic RAM (MRAM) Rashba spin-orbit interaction spin transfer torque (STT) 10.1109/TMAG.2011.2158634 IEEE Transactions on Magnetics 47 10 3868-3871 IEMGA 2014-10-07T04:47:25Z 2014-10-07T04:47:25Z 2011-10 Conference Paper Guo, J., Tan, S.G., Jalil, M.B.A., Eason, K., Lua, S.Y.H., Rachid, S., Meng, H. (2011-10). MRAM device incorporating single-layer switching via rashba-induced spin torque. IEEE Transactions on Magnetics 47 (10) : 3868-3871. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2011.2158634 00189464 http://scholarbank.nus.edu.sg/handle/10635/83980 000296418200398 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Magnetic RAM (MRAM) Rashba spin-orbit interaction spin transfer torque (STT)
spellingShingle	Magnetic RAM (MRAM) Rashba spin-orbit interaction spin transfer torque (STT) Guo, J. Tan, S.G. Jalil, M.B.A. Eason, K. Lua, S.Y.H. Rachid, S. Meng, H. MRAM device incorporating single-layer switching via rashba-induced spin torque
description	10.1109/TMAG.2011.2158634
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Guo, J. Tan, S.G. Jalil, M.B.A. Eason, K. Lua, S.Y.H. Rachid, S. Meng, H.
format	Conference or Workshop Item
author	Guo, J. Tan, S.G. Jalil, M.B.A. Eason, K. Lua, S.Y.H. Rachid, S. Meng, H.
author_sort	Guo, J.
title	MRAM device incorporating single-layer switching via rashba-induced spin torque
title_short	MRAM device incorporating single-layer switching via rashba-induced spin torque
title_full	MRAM device incorporating single-layer switching via rashba-induced spin torque
title_fullStr	MRAM device incorporating single-layer switching via rashba-induced spin torque
title_full_unstemmed	MRAM device incorporating single-layer switching via rashba-induced spin torque
title_sort	mram device incorporating single-layer switching via rashba-induced spin torque
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83980
_version_	1781784411762589696

MRAM device incorporating single-layer switching via rashba-induced spin torque

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