Novel bipolar TaOx-based resistive random access memory

• Main Authors: Wu, W., Tong, X., Zhao, R., Shi, L., Yang, H., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: bipolar; filament; forming gas anneal (FGA); Resistive Random Access Memory; RRAM; TaO x
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84016
• Institution: National University of Singapore

10.1109/NVMTS.2011.6137095