Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs

Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Koh, S.-M., Ding, Y., Guo, C., Leong, K.-C., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84025
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Institution: National University of Singapore
Description
Summary:Digest of Technical Papers - Symposium on VLSI Technology

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