Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
Digest of Technical Papers - Symposium on VLSI Technology
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sg-nus-scholar.10635-840252015-01-06T20:51:05Z Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology 86-87 DTPTE 2014-10-07T04:47:55Z 2014-10-07T04:47:55Z 2011 Conference Paper Koh, S.-M.,Ding, Y.,Guo, C.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : 86-87. ScholarBank@NUS Repository. 9784863481640 07431562 http://scholarbank.nus.edu.sg/handle/10635/84025 NOT_IN_WOS Scopus |
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Digest of Technical Papers - Symposium on VLSI Technology |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. |
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Conference or Workshop Item |
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Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. |
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Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs |
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Koh, S.-M. |
title |
Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs |
title_short |
Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs |
title_full |
Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs |
title_fullStr |
Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs |
title_full_unstemmed |
Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs |
title_sort |
novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-finfets |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/84025 |
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1681089543388790784 |