Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs

Digest of Technical Papers - Symposium on VLSI Technology

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Main Authors:	Koh, S.-M., Ding, Y., Guo, C., Leong, K.-C., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84025
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84025
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spelling	sg-nus-scholar.10635-840252015-01-06T20:51:05Z Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology 86-87 DTPTE 2014-10-07T04:47:55Z 2014-10-07T04:47:55Z 2011 Conference Paper Koh, S.-M.,Ding, Y.,Guo, C.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : 86-87. ScholarBank@NUS Repository. 9784863481640 07431562 http://scholarbank.nus.edu.sg/handle/10635/84025 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Digest of Technical Papers - Symposium on VLSI Technology
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C.
format	Conference or Workshop Item
author	Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C.
spellingShingle	Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
author_sort	Koh, S.-M.
title	Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
title_short	Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
title_full	Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
title_fullStr	Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
title_full_unstemmed	Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
title_sort	novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-finfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84025
_version_	1681089543388790784

Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs

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