Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
Digest of Technical Papers - Symposium on VLSI Technology
Saved in:
Main Authors: | Koh, S.-M., Ding, Y., Guo, C., Leong, K.-C., Samudra, G.S., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84025 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
by: Koh, S.-M., et al.
Published: (2014) -
New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
by: Koh, S.-M., et al.
Published: (2014) -
Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
by: Sinha, M., et al.
Published: (2014) -
Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
by: Koh, S.-M., et al.
Published: (2014) -
P-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reduction
by: Sinha, M., et al.
Published: (2014)