Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application

Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application

10.1109/IEDM.2007.4418869

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Bibliographic Details
Main Authors: Zhang, G., Wan, S.H., Bobade, S.M., Lee, S.-H., Cho, B.-J., Won, J.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84026
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84026

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