Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application

10.1109/IEDM.2007.4418869

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Bibliographic Details
Main Authors:	Zhang, G., Wan, S.H., Bobade, S.M., Lee, S.-H., Cho, B.-J., Won, J.Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84026
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84026
record_format	dspace
spelling	sg-nus-scholar.10635-840262024-11-14T01:23:49Z Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application Zhang, G. Wan, S.H. Bobade, S.M. Lee, S.-H. Cho, B.-J. Won, J.Y. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2007.4418869 Technical Digest - International Electron Devices Meeting, IEDM 83-86 TDIMD 2014-10-07T04:47:56Z 2014-10-07T04:47:56Z 2007 Conference Paper Zhang, G., Wan, S.H., Bobade, S.M., Lee, S.-H., Cho, B.-J., Won, J.Y. (2007). Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application. Technical Digest - International Electron Devices Meeting, IEDM : 83-86. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418869 01631918 http://scholarbank.nus.edu.sg/handle/10635/84026 000259347800017 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2007.4418869
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, G. Wan, S.H. Bobade, S.M. Lee, S.-H. Cho, B.-J. Won, J.Y.
format	Conference or Workshop Item
author	Zhang, G. Wan, S.H. Bobade, S.M. Lee, S.-H. Cho, B.-J. Won, J.Y.
spellingShingle	Zhang, G. Wan, S.H. Bobade, S.M. Lee, S.-H. Cho, B.-J. Won, J.Y. Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
author_sort	Zhang, G.
title	Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
title_short	Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
title_full	Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
title_fullStr	Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
title_full_unstemmed	Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
title_sort	novel zro2/si3n4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84026
_version_	1821184368041787392

Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application

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