Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
10.1109/IEDM.2007.4418869
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Main Authors: | Zhang, G., Wan, S.H., Bobade, S.M., Lee, S.-H., Cho, B.-J., Won, J.Y. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84026 |
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Institution: | National University of Singapore |
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