Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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Bibliographic Details
Main Authors:	Koh, B.H., Ng, T.H., Zheng, J.X., Chim, W.K., Choi, W.K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Metal-insulator-semiconductor (MIS) Quantum mechanical (QM) modeling Zirconium dioxide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84120
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84120
record_format	dspace
spelling	sg-nus-scholar.10635-841202024-11-14T10:21:03Z Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric Koh, B.H. Ng, T.H. Zheng, J.X. Chim, W.K. Choi, W.K. ELECTRICAL & COMPUTER ENGINEERING Metal-insulator-semiconductor (MIS) Quantum mechanical (QM) modeling Zirconium dioxide IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE 135-140 2014-10-07T04:49:02Z 2014-10-07T04:49:02Z 2002 Conference Paper Koh, B.H.,Ng, T.H.,Zheng, J.X.,Chim, W.K.,Choi, W.K. (2002). Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 135-140. ScholarBank@NUS Repository. 0780375785 http://scholarbank.nus.edu.sg/handle/10635/84120 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Metal-insulator-semiconductor (MIS) Quantum mechanical (QM) modeling Zirconium dioxide
spellingShingle	Metal-insulator-semiconductor (MIS) Quantum mechanical (QM) modeling Zirconium dioxide Koh, B.H. Ng, T.H. Zheng, J.X. Chim, W.K. Choi, W.K. Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric
description	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, B.H. Ng, T.H. Zheng, J.X. Chim, W.K. Choi, W.K.
format	Conference or Workshop Item
author	Koh, B.H. Ng, T.H. Zheng, J.X. Chim, W.K. Choi, W.K.
author_sort	Koh, B.H.
title	Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric
title_short	Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric
title_full	Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric
title_fullStr	Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric
title_full_unstemmed	Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric
title_sort	quantum mechanical modeling of capacitance and gate current for mis structures using zirconium dioxide as the gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84120
_version_	1821233865369321472

Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric

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