Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

10.1002/pssc.200461393

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Bibliographic Details
Main Authors: Park, S.-J., Lee, H.-B., Shan, W.L., Chua, S.-J., Lee, J.-H., Hahm, S.-H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84157
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Institution: National University of Singapore
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Summary:10.1002/pssc.200461393

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