Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

• Main Authors: Park, S.-J., Lee, H.-B., Shan, W.L., Chua, S.-J., Lee, J.-H., Hahm, S.-H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84157
• Institution: National University of Singapore

10.1002/pssc.200461393